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- Manufacturer No：NAND512W3A2DZA6E
- Manufacturer：Micron Technology Inc.
- Category：Memory
- Datasheet：NAND512W3A2DZA6E
- SKU：3933166
- Description：Asynchronous Obsolete BOTTOM Non-Volatile ic memory -40C~85C TA 3/3.3V 512Mb 30mA
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NAND512W3A2DZA6E Details
Asynchronous Obsolete BOTTOM Non-Volatile ic memory -40C~85C TA 3/3.3V 512Mb 30mA
NAND512W3A2DZA6E Specification Parameters
- Toggle Bit: NO
- RoHS Status: ROHS3 Compliant
- Mount: Surface Mount
- Command User Interface: YES
- Part Status: Obsolete
- Packaging: Tray
- Operating Temperature: -40°C~85°C TA
- Terminal Position: BOTTOM
- Memory Interface: Parallel
- Memory Type: Non-Volatile
- Voltage - Supply: 2.7V~3.6V
- Access Time (Max): 35 ns
- Number of Pins: 63
- Write Cycle Time - Word, Page: 50ns
- Page Size: 512B
- Memory Size: 512Mb 64M x 8
- Density: 512 Mb
- Organization: 64MX8
- Package / Case: 63-TFBGA
- Data Polling: NO
- Mounting Type: Surface Mount
- Radiation Hardening: No
- Ready/Busy: YES
- Memory Width: 8
- Moisture Sensitivity Level (MSL): 3 (168 Hours)
- Memory Format: FLASH
- Terminal Pitch: 0.8mm
- Nominal Supply Current: 30mA
- Word Size: 8b
- Sync/Async: Asynchronous
- Number of Terminations: 63
- Power Supplies: 3/3.3V
- Technology: FLASH - NAND
- Standby Current-Max: 0.00005A
- Number of Sectors/Size: 4K
- Address Bus Width: 26b
- Sector Size: 16K
- Base Part Number: NAND512-A
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Micron Technology Inc. — Manufacturer Introduction
In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.
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