Add to like
Add to project list
  • Manufacturer No:
    NAND128W3A0BN6E
  • Manufacturer:
  • Category:
    Memory
  • Datasheet:
    Get the PDF file
  • SKU:
    3933557
  • Description:
    Asynchronous Obsolete 2004 DUAL ic memory -40C~85C TA 3V 128Mb 20mA
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    NAND128W3A0BN6E
  • Manufacturer:
    Micron Technology Inc.
  • Category:
    Memory
  • Datasheet:
    NAND128W3A0BN6E
  • SKU:
    3933557
  • Description:
    Asynchronous Obsolete 2004 DUAL ic memory -40C~85C TA 3V 128Mb 20mA

NAND128W3A0BN6E Details

Asynchronous Obsolete 2004 DUAL ic memory -40C~85C TA 3V 128Mb 20mA

NAND128W3A0BN6E Specification Parameters

  • Toggle Bit: NO
  • RoHS Status: ROHS3 Compliant
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Command User Interface: YES
  • JESD-609 Code: e3
  • Memory Width: 8
  • Packaging: Tray
  • Moisture Sensitivity Level (MSL): 3 (168 Hours)
  • Supply Voltage: 3V
  • Voltage: 3V
  • Terminal Pitch: 0.5mm
  • Number of Terminations: 48
  • Pin Count: 48
  • Memory Interface: Parallel
  • Height Seated (Max): 1.2mm
  • Memory Type: Non-Volatile
  • Voltage - Supply: 2.7V~3.6V
  • Access Time (Max): 35 ns
  • Write Cycle Time - Word, Page: 50ns
  • Technology: FLASH - NAND
  • Package / Case: 48-TFSOP (0.724, 18.40mm Width)
  • Memory Size: 128Mb 16M x 8
  • Address Bus Width: 24b
  • Organization: 16MX8
  • Page Size: 512words
  • Data Polling: NO
  • Mounting Type: Surface Mount
  • Number of Functions: 1
  • Radiation Hardening: No
  • Ready/Busy: YES
  • Part Status: Obsolete
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 30
  • Voltage - Rated DC: 3V
  • Operating Temperature: -40°C~85°C TA
  • Memory Format: FLASH
  • Number of Pins: 48
  • Published: 2004
  • Nominal Supply Current: 20mA
  • Terminal Finish: MATTE TIN
  • Word Size: 8b
  • Sync/Async: Asynchronous
  • HTS Code: 8542.32.00.51
  • Length: 18.4mm
  • ECCN Code: 3A991.B.1.A
  • Number of Sectors/Size: 1K
  • Standby Current-Max: 0.00005A
  • Density: 128 Mb
  • Sector Size: 16K
  • Base Part Number: NAND128-A

Micron Technology Inc. — Manufacturer Introduction

In 1978, Micron Technology Co., Ltd. was established. Is one of the world's largest semiconductor storage and imaging products manufacturers, its main products include DRAM, NAND flash memory, NOR flash memory, SSD solid state drives and CMOS image sensors, the head office (Micron Technology, Inc.) is located in Boise, the capital of Idaho in the northwest of the United States.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via