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- Manufacturer No：2N7002BKW,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：2N7002BKW,115
- SKU：3942542
- Description：2N7002BKW Series N-Channel 60 V 1.6 Ohm 275 mW 0.5nC SMT TrenchMOS FET - SOT-323
User Guide
User Guide
2N7002BKW,115 Details
2N7002BKW Series N-Channel 60 V 1.6 Ohm 275 mW 0.5nC SMT TrenchMOS FET - SOT-323
2N7002BKW,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Terminal Position: DUAL
- Pin Count: 3
- Drain to Source Voltage (Vdss): 60V
- Factory Lead Time: 4 Weeks
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Operating Temperature: 150°C TJ
- Configuration: SINGLE WITH BUILT-IN DIODE
- Package / Case: SC-70, SOT-323
- Series: Automotive, AEC-Q101, TrenchMOS?
- Drain Current-Max (Abs) (ID): 0.31A
- Rds On (Max) @ Id, Vgs: 1.6 Ω @ 500mA, 10V
- Current - Continuous Drain (Id) @ 25°C: 310mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- JESD-609 Code: e3
- Number of Terminations: 3
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 60V
- Published: 2010
- Terminal Finish: Tin (Sn)
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Pulsed Drain Current-Max (IDM): 1.2A
- JESD-30 Code: R-PDSO-G3
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Vgs(th) (Max) @ Id: 2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
- Power Dissipation-Max: 275mW Ta
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