Add to like
Add to project list
  • Manufacturer No:
    BC856B,215
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    3948389
  • Description:
    NEXPERIA - BC856B,215 - Bipolarer Einzeltransistor (BJT), Universal, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 220 hFE
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:1217967
  • Qty Unit Price price
  • 1 $3.126 $3.126
  • 10 $3.095 $30.95
  • 100 $3.064 $306.4
  • 1000 $3.033 $3033
  • 10000 $3.002 $30020

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    BC856B,215
  • Manufacturer:
    Nexperia USA Inc.
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    BC856B,215
  • SKU:
    3948389
  • Description:
    NEXPERIA - BC856B,215 - Bipolarer Einzeltransistor (BJT), Universal, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 220 hFE

BC856B,215 Details

NEXPERIA - BC856B,215 - Bipolarer Einzeltransistor (BJT), Universal, PNP, -65 V, 100 MHz, 250 mW, -100 mA, 220 hFE

BC856B,215 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Pin Count: 3
  • Power - Max: 250mW
  • Terminal Finish: Tin (Sn)
  • Configuration: Single
  • Current - Collector (Ic) (Max): 100mA
  • Frequency - Transition: 100MHz
  • Series: Automotive, AEC-Q101
  • Transistor Type: PNP
  • Operating Temperature: 150°C TJ
  • HTS Code: 8541.21.00.95
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Base Part Number: BC856
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Surface Mount: YES
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Factory Lead Time: 4 Weeks
  • Transistor Element Material: SILICON
  • Published: 2001
  • Transition Frequency: 100MHz
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Polarity/Channel Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Current - Collector Cutoff (Max): 15nA ICBO
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA 5V

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via