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- Manufacturer No：BUK7Y4R8-60EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK7Y4R8-60EX
- SKU：3950103
- Description：MOSFET N-CH 60V 100A LFPAK
User Guide
User Guide
BUK7Y4R8-60EX Details
MOSFET N-CH 60V 100A LFPAK
BUK7Y4R8-60EX Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Lead Free: Lead Free
- Number of Pins: 4
- Pin Count: 4
- Terminal Form: GULL WING
- Max Dual Supply Voltage: 60V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Fall Time (Typ): 31 ns
- Package / Case: SC-100, SOT-669
- JEDEC-95 Code: MO-235
- Pulsed Drain Current-Max (IDM): 595A
- Power Dissipation-Max: 238W Tc
- Gate Charge (Qg) (Max) @ Vgs: 73.1nC @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Factory Lead Time: 12 Weeks
- Number of Terminations: 4
- Published: 2013
- Drain to Source Breakdown Voltage: 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Terminal Position: SINGLE
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 100A
- Case Connection: DRAIN
- Additional Feature: AVALANCHE RATED
- Series: TrenchMOS?
- Current - Continuous Drain (Id) @ 25°C: 100A Tc
- Turn-Off Delay Time: 57 ns
- Rise Time: 27ns
- Power Dissipation: 238W
- Rds On (Max) @ Id, Vgs: 4.8m Ω @ 25A, 10V
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