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- Manufacturer No：PMV65XPEAR
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PMV65XPEAR
- SKU：3952988
- Description：MOSFET P-CH 20V SOT23
User Guide
User Guide
PMV65XPEAR Details
MOSFET P-CH 20V SOT23
PMV65XPEAR Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- JESD-609 Code: e3
- Number of Terminations: 3
- Terminal Form: GULL WING
- Factory Lead Time: 4 Weeks
- Published: 2014
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 20V
- Packaging: Cut Tape (CT)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- JESD-30 Code: R-PDSO-G3
- Continuous Drain Current (ID): 2.8A
- JEDEC-95 Code: TO-236AB
- Reference Standard: AEC-Q101; IEC-60134
- Drain-source On Resistance-Max: 0.078Ohm
- Current - Continuous Drain (Id) @ 25°C: 2.8A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 618pF @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Terminal Position: DUAL
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 30
- Terminal Finish: Tin (Sn)
- Drain to Source Voltage (Vdss): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- FET Type: P-Channel
- Vgs (Max): ±12V
- Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
- Vgs(th) (Max) @ Id: 1.25V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
- Power Dissipation-Max: 480mW Ta 6.25W Tc
- Rds On (Max) @ Id, Vgs: 78m Ω @ 2.8A, 4.5V
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