BAS716,115Nexperia USA Inc.
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    • Manufacturer No：
      BAS716,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Diodes - Rectifiers - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      3953304
    • Description：
      DIODE GEN PURP 75V 200MA SOD523
    • Quantity：
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    Inventory:156000
    • Qty Unit Price price
    • 1 $0.059 $0.059
    • 10 $0.058 $0.58
    • 100 $0.057 $5.7
    • 1000 $0.056 $56
    • 10000 $0.055 $550

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    • Manufacturer No：
      BAS716,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Diodes - Rectifiers - Single
    • Datasheet：
      BAS716,115
    • SKU：
      3953304
    • Description：
      DIODE GEN PURP 75V 200MA SOD523

    User Guide

    User Guide

    BAS716,115 Details

    DIODE GEN PURP 75V 200MA SOD523

    BAS716,115 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Number of Pins: 2
    • Mounting Type: Surface Mount
    • Number of Elements: 1
    • Surface Mount: YES
    • Terminal Position: DUAL
    • Peak Reflow Temperature (Cel): 260
    • Time@Peak Reflow Temperature-Max (s): 40
    • Terminal Finish: Tin (Sn)
    • Configuration: Single
    • Voltage - DC Reverse (Vr) (Max): 75V
    • Forward Current: 200mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Operating Temperature - Junction: 150°C Max
    • Current - Average Rectified (Io): 200mA DC
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
    • Current - Reverse Leakage @ Vr: 5nA @ 75V
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Pin Count: 2
    • Packaging: Tape & Reel (TR)
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Factory Lead Time: 4 Weeks
    • Operating Temperature (Max): 150°C
    • Diode Element Material: SILICON
    • Diode Type: Standard
    • Terminal Form: FLAT
    • Rep Pk Reverse Voltage-Max: 85V
    • HTS Code: 8541.10.00.70
    • Package / Case: SC-79, SOD-523
    • Reverse Recovery Time: 3μs
    • Capacitance @ Vr, F: 2pF @ 0V 1MHz
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