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- Manufacturer No：PMV45EN2R
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PMV45EN2R
- SKU：3953907
- Description：MOSFET N-CH 30V SOT23
User Guide
User Guide
PMV45EN2R Details
MOSFET N-CH 30V SOT23
PMV45EN2R Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Lead Free: Lead Free
- Number of Terminations: 3
- Terminal Form: GULL WING
- Transistor Element Material: SILICON
- DS Breakdown Voltage-Min: 30V
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Resistance: 35mOhm
- Continuous Drain Current (ID): 4.1A
- JEDEC-95 Code: TO-236AB
- Current - Continuous Drain (Id) @ 25°C: 4.1A Ta
- Rds On (Max) @ Id, Vgs: 42m Ω @ 4.1A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Terminal Position: DUAL
- Pin Count: 3
- Factory Lead Time: 4 Weeks
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Published: 1997
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- JESD-30 Code: R-PDSO-G3
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Reference Standard: IEC-60134
- Additional Feature: LOGIC LEVEL COMPATIBLE
- Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V
- Power Dissipation-Max: 510mW Ta 5W Tc
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