PUMH10,115Nexperia USA Inc.
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    • Manufacturer No：
      PUMH10,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Arrays, Pre-Biased
    • Datasheet：
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    • SKU：
      3954287
    • Description：
      TRANS 2NPN PREBIAS 0.3W 6TSSOP
    • Quantity：
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    Inventory:44650
    • Qty Unit Price price
    • 1 $0.292 $0.292
    • 10 $0.289 $2.89
    • 100 $0.286 $28.6
    • 1000 $0.283 $283
    • 10000 $0.28 $2800

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    • Manufacturer No：
      PUMH10,115
    • Manufacturer：
      Nexperia USA Inc.
    • Category：
      Transistors - Bipolar (BJT) - Arrays, Pre-Biased
    • Datasheet：
      PUMH10,115
    • SKU：
      3954287
    • Description：
      TRANS 2NPN PREBIAS 0.3W 6TSSOP

    User Guide

    User Guide

    PUMH10,115 Details

    TRANS 2NPN PREBIAS 0.3W 6TSSOP

    PUMH10,115 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • JESD-609 Code: e3
    • Qualification Status: Not Qualified
    • Collector Base Voltage (VCBO): 50V
    • Number of Pins: 6
    • Terminal Form: GULL WING
    • Peak Reflow Temperature (Cel): 260
    • Factory Lead Time: 4 Weeks
    • Max Junction Temperature (Tj): 150°C
    • Terminal Finish: Tin (Sn)
    • hFE Min: 100
    • Current - Collector Cutoff (Max): 1μA
    • Transistor Application: SWITCHING
    • Polarity: NPN
    • Package / Case: 6-TSSOP, SC-88, SOT-363
    • HTS Code: 8541.21.00.95
    • Transistor Type: 2 NPN - Pre-Biased (Dual)
    • Resistor - Base (R1): 2.2k Ω
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA 5V
    • RoHS Status: ROHS3 Compliant
    • Number of Elements: 2
    • Packaging: Tape & Reel (TR)
    • Surface Mount: YES
    • Emitter Base Voltage (VEBO): 5V
    • Collector Emitter Voltage (VCEO): 50V
    • Number of Terminations: 6
    • Pin Count: 6
    • REACH SVHC: No SVHC
    • Published: 2011
    • Time@Peak Reflow Temperature-Max (s): 40
    • Ambient Temperature Range High: 150°C
    • Transistor Element Material: SILICON
    • Max Collector Current: 100mA
    • Power Dissipation: 200mW
    • Height: 1.1mm
    • Power - Max: 300mW
    • Collector Emitter Saturation Voltage: 100mV
    • Resistor - Emitter Base (R2): 47k Ω
    • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
    • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250μA, 5mA
    • Base Part Number: P*MH10
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