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- Manufacturer No：BUK9M120-100EX
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BUK9M120-100EX
- SKU：3960491
- Description：BUK9M120-100E - N-channel 100 V, 120 mO logic level MOSFET in LFPAK33
User Guide
User Guide
BUK9M120-100EX Details
BUK9M120-100E - N-channel 100 V, 120 mO logic level MOSFET in LFPAK33
BUK9M120-100EX Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Drive Voltage (Max Rds On,Min Rds On): 5V
- Published: 2016
- Drain to Source Voltage (Vdss): 100V
- Transistor Element Material: SILICON
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM): 46A
- Continuous Drain Current (ID): 11.5A
- JESD-30 Code: R-PSSO-G4
- Drain-source On Resistance-Max: 0.12Ohm
- Power Dissipation-Max: 44W Tc
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 5V
- Rds On (Max) @ Id, Vgs: 119m Ω @ 5A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Pin Count: 8
- Number of Terminations: 4
- Terminal Form: GULL WING
- DS Breakdown Voltage-Min: 100V
- Terminal Position: SINGLE
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Factory Lead Time: 26 Weeks
- Case Connection: DRAIN
- Vgs (Max): ±10V
- Reference Standard: AEC-Q101; IEC-60134
- Series: Automotive, AEC-Q101, TrenchMOS?
- Package / Case: SOT-1210, 8-LFPAK33
- Current - Continuous Drain (Id) @ 25°C: 11.5A Tc
- Vgs(th) (Max) @ Id: 2.05V @ 1mA
- Avalanche Energy Rating (Eas): 13.2 mJ
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