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- Manufacturer No：PMV30UN2R
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PMV30UN2R
- SKU：3962561
- Description：In a Pack of 50, N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R
User Guide
User Guide
PMV30UN2R Details
In a Pack of 50, N-Channel MOSFET, 5.4 A, 20 V, 3-Pin SOT-23 Nexperia PMV30UN2R
PMV30UN2R Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Power Dissipation: 1W
- Gate to Source Voltage (Vgs): 12V
- Ambient Temperature Range High: 150°C
- Drain to Source Breakdown Voltage: 20V
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time: 35 ns
- Continuous Drain Current (ID): 4.2A
- Threshold Voltage: 650mV
- Vgs(th) (Max) @ Id: 900mV @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 1.2V 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
- Power Dissipation-Max: 490mW Ta 5W Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Factory Lead Time: 4 Weeks
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Published: 1997
- Height: 1.1mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Fall Time (Typ): 10 ns
- Turn On Delay Time: 7 ns
- Vgs (Max): ±12V
- Rise Time: 26ns
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 4.2A Ta
- Rds On (Max) @ Id, Vgs: 32m Ω @ 4.2A, 4.5V
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