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- Manufacturer No：BSH103,215
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：BSH103,215
- SKU：3965880
- Description：MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 500 mW
User Guide
User Guide
BSH103,215 Details
MOSFET Operating temperature: -55...+150 °C Housing type: SOT-23 Polarity: N Power dissipation: 500 mW
BSH103,215 Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Terminal Position: DUAL
- Number of Terminations: 3
- Pin Count: 3
- Drive Voltage (Max Rds On,Min Rds On): 2.5V
- Transistor Element Material: SILICON
- Part Status: Not For New Designs
- Power Dissipation: 750mW
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Published: 1998
- Continuous Drain Current (ID): 850mA
- Vgs (Max): ±8V
- Drain Current-Max (Abs) (ID): 0.85A
- Power Dissipation-Max: 540mW Ta
- Rds On (Max) @ Id, Vgs: 400m Ω @ 500mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 24V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Factory Lead Time: 6 Weeks
- Number of Pins: 3
- Terminal Form: GULL WING
- Terminal Finish: Tin (Sn)
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Configuration: SINGLE WITH BUILT-IN DIODE
- HTS Code: 8541.21.00.75
- Drain-source On Resistance-Max: 0.5Ohm
- Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 850mA Ta
- Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
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