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- Manufacturer No：PSMN1R2-25YLC,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PSMN1R2-25YLC,115
- SKU：3973051
- Description：MOSFET N-CH 25V 100A LFPAK
User Guide
User Guide
PSMN1R2-25YLC,115 Details
MOSFET N-CH 25V 100A LFPAK
PSMN1R2-25YLC,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 4
- Terminal Form: GULL WING
- Published: 2011
- Max Dual Supply Voltage: 25V
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- Max Input Voltage: 20V
- Output Type: Fixed
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Configuration: SINGLE WITH BUILT-IN DIODE
- Quiescent Current: 6mA
- Accuracy: 1 %
- Turn On Delay Time: 32 ns
- Current - Continuous Drain (Id) @ 25°C: 100A Tc
- JEDEC-95 Code: MO-235
- Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
- Power Dissipation-Max: 179W Tc
- Additional Feature: HIGH RELIABILITY, ULTRA LOW RESISTANCE
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Lead Free: Lead Free
- Number of Pins: 4
- Pin Count: 4
- Output Voltage: 2.5V
- Drain to Source Breakdown Voltage: 25V
- Max Output Current: 1A
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Polarity: Positive
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 100A
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 60 ns
- Fall Time (Typ): 29 ns
- Package / Case: SC-100, SOT-669
- Rise Time: 42ns
- Vgs(th) (Max) @ Id: 1.95V @ 1mA
- Power Dissipation: 179W
- Rds On (Max) @ Id, Vgs: 1.3m Ω @ 25A, 10V
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