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- Manufacturer No：PSMN8R5-60YS,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：PSMN8R5-60YS,115
- SKU：3974972
- Description：MOSFET N-CHANNEL 60V STD LEVEL MOSFET
User Guide
User Guide
PSMN8R5-60YS,115 Details
MOSFET N-CHANNEL 60V STD LEVEL MOSFET
PSMN8R5-60YS,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- Radiation Hardening: No
- JESD-609 Code: e3
- Factory Lead Time: 12 Weeks
- Number of Terminations: 4
- Terminal Form: GULL WING
- Max Dual Supply Voltage: 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Width: 6.35mm
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Configuration: SINGLE WITH BUILT-IN DIODE
- Weight: 4.535924g
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Fall Time (Typ): 9.2 ns
- Drain-source On Resistance-Max: 0.008Ohm
- Current - Continuous Drain (Id) @ 25°C: 76A Tc
- Turn On Delay Time: 18.4 ns
- Power Dissipation-Max: 106W Tc
- Pulsed Drain Current-Max (IDM): 303A
- Turn-Off Delay Time: 32.4 ns
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Surface Mount: YES
- Lead Free: Lead Free
- Number of Pins: 4
- Pin Count: 4
- Drain to Source Breakdown Voltage: 60V
- Published: 2014
- Terminal Finish: Tin (Sn)
- Terminal Position: SINGLE
- Length: 6.35mm
- Height: 6.35mm
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Continuous Drain Current (ID): 76A
- Package / Case: SC-100, SOT-669
- JEDEC-95 Code: MO-235
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
- Avalanche Energy Rating (Eas): 97 mJ
- Power Dissipation: 106W
- Rise Time: 13.7 ns
- Rds On (Max) @ Id, Vgs: 8m Ω @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 30V
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