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- Manufacturer No：PMDT290UNE,115
- Manufacturer：Nexperia USA Inc.
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：PMDT290UNE,115
- SKU：3979795
- Description：Mosfet Array 2 N-Channel (Dual) 20V 800mA 500mW Surface Mount SOT-666
User Guide
User Guide
PMDT290UNE,115 Details
Mosfet Array 2 N-Channel (Dual) 20V 800mA 500mW Surface Mount SOT-666
PMDT290UNE,115 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Radiation Hardening: No
- JESD-609 Code: e3
- Number of Terminations: 6
- Pin Count: 6
- Factory Lead Time: 4 Weeks
- Max Power Dissipation: 500mW
- Terminal Finish: Tin (Sn)
- Max Dual Supply Voltage: 20V
- Operating Temperature: -55°C~150°C TJ
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- FET Feature: Logic Level Gate
- Rise Time: 4ns
- Drain Current-Max (Abs) (ID): 0.8A
- Series: Automotive, AEC-Q101, TrenchMOS?
- Vgs(th) (Max) @ Id: 950mV @ 250μA
- Turn-Off Delay Time: 86 ns
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Surface Mount: YES
- Lead Free: Lead Free
- Number of Pins: 6
- Published: 2011
- Element Configuration: Dual
- Power - Max: 500mW
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 20V
- Terminal Form: FLAT
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 800mA
- Turn On Delay Time: 6 ns
- FET Type: 2 N-Channel (Dual)
- Package / Case: SOT-563, SOT-666
- Fall Time (Typ): 31 ns
- Power Dissipation: 390mW
- Drain-source On Resistance-Max: 0.38Ohm
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Rds On (Max) @ Id, Vgs: 380m Ω @ 500mA, 4.5V
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