SQ2319ADS-T1_GE3Vishay Siliconix
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    SQ2319ADS-T1_GE3123
    • Manufacturer No：
      SQ2319ADS-T1_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      399880
    • Description：
      MOSFET P-CH 40V 4.6A SOT23-3
    • Quantity：
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    Inventory:14659
    • Qty Unit Price price
    • 1 $110.307 $110.307
    • 10 $109.214 $1092.14
    • 100 $108.132 $10813.2
    • 1000 $107.061 $107061
    • 10000 $106 $1060000

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    SQ2319ADS-T1_GE3
    • Manufacturer No：
      SQ2319ADS-T1_GE3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SQ2319ADS-T1_GE3
    • SKU：
      399880
    • Description：
      MOSFET P-CH 40V 4.6A SOT23-3

    User Guide

    User Guide

    SQ2319ADS-T1_GE3 Details

    MOSFET P-CH 40V 4.6A SOT23-3

    SQ2319ADS-T1_GE3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Packaging: Tape & Reel (TR)
    • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
    • Factory Lead Time: 12 Weeks
    • Reach Compliance Code: unknown
    • Operating Temperature: -55°C~150°C TJ
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • Vgs(th) (Max) @ Id: 2.5V @ 250μA
    • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
    • Current - Continuous Drain (Id) @ 25°C: 4.6A Tc
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Surface Mount
    • ECCN Code: EAR99
    • Peak Reflow Temperature (Cel): NOT SPECIFIED
    • Published: 2016
    • Drain to Source Voltage (Vdss): 40V
    • Technology: MOSFET (Metal Oxide)
    • Vgs (Max): ±20V
    • FET Type: P-Channel
    • Series: Automotive, AEC-Q101, TrenchFET?
    • Power Dissipation-Max: 2.5W Tc
    • Rds On (Max) @ Id, Vgs: 75m Ω @ 3A, 10V
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