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- Manufacturer No：SISA12ADN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SISA12ADN-T1-GE3
- SKU：401614
- Description：MOSFET 30V 4.3mOhm@10V 25A N-Ch
User Guide
User Guide
SISA12ADN-T1-GE3 Details
MOSFET 30V 4.3mOhm@10V 25A N-Ch
SISA12ADN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Terminations: 5
- REACH SVHC: Unknown
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 25A
- Threshold Voltage: 1.1V
- Case Connection: DRAIN
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Series: TrenchFET?
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 25A Tc
- Drain-source On Resistance-Max: 0.0043Ohm
- Power Dissipation-Max: 3.5W Ta 28W Tc
- Rds On (Max) @ Id, Vgs: 4.3m Ω @ 10A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Number of Pins: 8
- Published: 2013
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Configuration: SINGLE WITH BUILT-IN DIODE
- Subcategory: FET General Purpose Power
- Power Dissipation: 3.5W
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Package / Case: PowerPAK? 1212-8
- Vgs (Max): +20V, -16V
- JESD-30 Code: S-PDSO-C5
- Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 15V
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