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- Manufacturer No：SIS406DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SIS406DN-T1-GE3
- SKU：401660
- Description：MOSFET 30V 14A 3.7W 11mohm @ 10V
User Guide
User Guide
SIS406DN-T1-GE3 Details
MOSFET 30V 14A 3.7W 11mohm @ 10V
SIS406DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Pins: 8
- Terminal Position: DUAL
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Gate to Source Voltage (Vgs): 25V
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Subcategory: FET General Purpose Power
- Width: 3.05mm
- Continuous Drain Current (ID): 9A
- Turn-Off Delay Time: 25 ns
- Fall Time (Typ): 12 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Vgs (Max): ±25V
- Power Dissipation-Max: 1.5W Ta
- Avalanche Energy Rating (Eas): 20 mJ
- Current - Continuous Drain (Id) @ 25°C: 9A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Pin Count: 8
- Published: 2013
- Number of Terminations: 5
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 30V
- Terminal Finish: MATTE TIN
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 1.5W
- Pulsed Drain Current-Max (IDM): 50A
- Case Connection: DRAIN
- Length: 3.05mm
- Drain Current-Max (Abs) (ID): 9A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn On Delay Time: 20 ns
- Rise Time: 12 ns
- Series: TrenchFET?
- Height: 1.04mm
- Package / Case: PowerPAK? 1212-8
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- JESD-30 Code: S-XDSO-C5
- Rds On (Max) @ Id, Vgs: 11m Ω @ 12A, 10V
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