Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:17244
- Qty Unit Price price
- 1 $14.748 $14.748
- 10 $14.601 $146.01
- 100 $14.456 $1445.6
- 1000 $14.312 $14312
- 10000 $14.17 $141700
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：2N6517TA
- Manufacturer：ON Semiconductor
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：2N6517TA
- SKU：4021406
- Description：Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 50mA 10V 50nA ICBO 625mW 200MHz
User Guide
User Guide
2N6517TA Details
Tape & Box (TB) Through Hole NPN Single Bipolar (BJT) Transistor 20 @ 50mA 10V 50nA ICBO 625mW 200MHz
2N6517TA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 6 Weeks
- Number of Pins: 3
- hFE Min: 30
- Transistor Element Material: SILICON
- Packaging: Tape & Box (TB)
- Terminal Position: BOTTOM
- Max Collector Current: 500mA
- Collector Emitter Voltage (VCEO): 350V
- Collector Base Voltage (VCBO): 350V
- Collector Emitter Saturation Voltage: 1V
- Frequency: 200MHz
- Transistor Type: NPN
- Transition Frequency: 40MHz
- Subcategory: Other Transistors
- Max Power Dissipation: 625mW
- Height: 4.58mm
- Current - Collector Cutoff (Max): 50nA ICBO
- Weight: 240mg
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Published: 2007
- Element Configuration: Single
- Emitter Base Voltage (VEBO): 6V
- Current Rating: 500mA
- Voltage - Rated DC: 350V
- Collector Emitter Breakdown Voltage: 350V
- Max Breakdown Voltage: 350V
- Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
- Gain Bandwidth Product: 200MHz
- Polarity/Channel Type: NPN
- Operating Temperature: 150°C TJ
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Power Dissipation: 625mW
- Length: 4.58mm
- Width: 3.86mm
- Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
- Base Part Number: 2N6517
Search for similar products
2N6517TA Similar Products
The four parts on the right have similar specifications to ON Semiconductor & 2N6517TA
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
