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  • Manufacturer No:
    FQP27N25
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4030419
  • Description:
    QFET® Tube Through Hole N-Channel Mosfet Transistor 25.5A Tc 25.5A 180W 120ns
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  • Manufacturer No:
    FQP27N25
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FQP27N25
  • SKU:
    4030419
  • Description:
    QFET® Tube Through Hole N-Channel Mosfet Transistor 25.5A Tc 25.5A 180W 120ns

FQP27N25 Details

QFET® Tube Through Hole N-Channel Mosfet Transistor 25.5A Tc 25.5A 180W 120ns

FQP27N25 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Packaging: Tube
  • Number of Pins: 3
  • Voltage - Rated DC: 250V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Published: 2000
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Package / Case: TO-220-3
  • Subcategory: FET General Purpose Power
  • Vgs (Max): ±30V
  • Length: 10.1mm
  • Turn-Off Delay Time: 80 ns
  • Series: QFET?
  • Power Dissipation: 180W
  • Weight: 1.8g
  • Current Rating: 25.5A
  • Power Dissipation-Max: 180W Tc
  • Rise Time: 270ns
  • Current - Continuous Drain (Id) @ 25°C: 25.5A Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Factory Lead Time: 8 Weeks
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 250V
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Width: 4.7mm
  • JEDEC-95 Code: TO-220AB
  • Height: 9.4mm
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Fall Time (Typ): 120 ns
  • Turn On Delay Time: 32 ns
  • Nominal Vgs: 5 V
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Continuous Drain Current (ID): 25.5A
  • Avalanche Energy Rating (Eas): 600 mJ
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Rds On (Max) @ Id, Vgs: 110m Ω @ 12.75A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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