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  • Manufacturer No:
    FDV304P
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4030921
  • Description:
    ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount
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Inventory:75276
  • Qty Unit Price price
  • 1 $0.128 $0.128
  • 10 $0.126 $1.26
  • 100 $0.124 $12.4
  • 1000 $0.122 $122
  • 10000 $0.1201 $1201

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  • Manufacturer No:
    FDV304P
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDV304P
  • SKU:
    4030921
  • Description:
    ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount

FDV304P Details

ON SEMICONDUCTOR - FDV304P - Power MOSFET, P Channel, 25 V, 460 mA, 1.22 ohm, SOT-23, Surface Mount

FDV304P Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 30
  • Voltage: 25V
  • Element Configuration: Single
  • Technology: MOSFET (Metal Oxide)
  • Width: 1.3mm
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Resistance: 1.5Ohm
  • Fall Time (Typ): 8 ns
  • Power Dissipation: 350mW
  • Turn-Off Delay Time: 55 ns
  • Continuous Drain Current (ID): 460mA
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Lifecycle Status: ACTIVE (Last Updated: 17 hours ago)
  • Drain to Source Breakdown Voltage: -25V
  • Height: 1.11mm
  • Drive Voltage (Max Rds On,Min Rds On): 2.7V 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 63pF @ 10V
  • Current Rating: -460mA
  • Threshold Voltage: -860mV
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Factory Lead Time: 10 Weeks
  • Termination: SMD/SMT
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Published: 1997
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Length: 2.92mm
  • FET Type: P-Channel
  • Rise Time: 8 ns
  • Turn On Delay Time: 7 ns
  • Current: 46A
  • Vgs (Max): ±8V
  • Gate to Source Voltage (Vgs): -8V
  • Voltage - Rated DC: -25V
  • Dual Supply Voltage: -25V
  • Power Dissipation-Max: 350mW Ta
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 460mA Ta
  • Rds On (Max) @ Id, Vgs: 1.1 Ω @ 500mA, 4.5V
  • Nominal Vgs: -860 mV

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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