Add to like
Add to project list
123
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:1
- Qty Unit Price price
- 1 $1.61 $1.61
- 10 $1.594 $15.94
- 100 $1.578 $157.8
- 1000 $1.562 $1562
- 10000 $1.546 $15460
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：FQB19N20LTM
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FQB19N20LTM
- SKU：4031088
- Description：Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
User Guide
User Guide
FQB19N20LTM Details
Trans MOSFET N-CH 200V 21A 3-Pin(2+Tab) D2PAK T/R
FQB19N20LTM Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- REACH SVHC: No SVHC
- Voltage: 200V
- Factory Lead Time: 7 Weeks
- Element Configuration: Single
- Threshold Voltage: 2V
- Published: 2000
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Length: 10.67mm
- Rise Time: 300 ns
- Continuous Drain Current (ID): 21mA
- Current Rating: 21A
- Series: QFET?
- Turn-Off Delay Time: 130 ns
- Fall Time (Typ): 180 ns
- Current - Continuous Drain (Id) @ 25°C: 21A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
- Rds On (Max) @ Id, Vgs: 140m Ω @ 10.5A, 10V
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Terminal Form: GULL WING
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Height: 4.83mm
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Turn On Delay Time: 35 ns
- Current: 17A
- Width: 9.65mm
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Resistance: 140mOhm
- Nominal Vgs: 2 V
- Drive Voltage (Max Rds On,Min Rds On): 5V 10V
- Lifecycle Status: ACTIVE (Last Updated: 16 hours ago)
- Avalanche Energy Rating (Eas): 250 mJ
- Power Dissipation: 3.13W
- Power Dissipation-Max: 3.13W Ta 140W Tc
Search for similar products
FQB19N20LTM Similar Products
The four parts on the right have similar specifications to ON Semiconductor & FQB19N20LTM
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
