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- Manufacturer No：FDD6637
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FDD6637
- SKU：4033782
- Description：ON SEMICONDUCTOR - FDD6637 - Power MOSFET, P Channel, 35 V, 13 A, 0.0097 ohm, TO-252 (DPAK), Surface Mount
User Guide
User Guide
FDD6637 Details
ON SEMICONDUCTOR - FDD6637 - Power MOSFET, P Channel, 35 V, 13 A, 0.0097 ohm, TO-252 (DPAK), Surface Mount
FDD6637 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Number of Pins: 3
- Terminal Form: GULL WING
- Max Junction Temperature (Tj): 150°C
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Length: 6.73mm
- Rise Time: 10 ns
- FET Type: P-Channel
- Width: 6.22mm
- Turn On Delay Time: 18 ns
- Series: PowerTrench?
- Fall Time (Typ): 36 ns
- Lifecycle Status: ACTIVE (Last Updated: 15 hours ago)
- Turn-Off Delay Time: 62 ns
- Threshold Voltage: -1.6V
- Continuous Drain Current (ID): -13A
- Height: 2.517mm
- Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 20V
- Power Dissipation-Max: 3.1W Ta 57W Tc
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Factory Lead Time: 10 Weeks
- REACH SVHC: No SVHC
- Gate to Source Voltage (Vgs): 25V
- Transistor Element Material: SILICON
- Published: 2017
- Drain to Source Voltage (Vdss): 35V
- Transistor Application: SWITCHING
- Subcategory: Other Transistors
- Case Connection: DRAIN
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Power Dissipation: 1.3W
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Drain Current-Max (Abs) (ID): 55A
- Vgs (Max): ±25V
- Drain to Source Breakdown Voltage: -35V
- Weight: 260.37mg
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Resistance: 11.6mOhm
- Nominal Vgs: -1.6 V
- Current - Continuous Drain (Id) @ 25°C: 13A Ta 55A Tc
- Rds On (Max) @ Id, Vgs: 11.6m Ω @ 14A, 10V
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ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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