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Inventory:21
  • Qty Unit Price price
  • 1 $0.156 $0.156
  • 10 $0.154 $1.54
  • 100 $0.152 $15.2
  • 1000 $0.15 $150
  • 10000 $0.1483 $1483

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  • Manufacturer No:
    FDN5630
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDN5630
  • SKU:
    4033818
  • Description:
    N-Channel 60 V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

FDN5630 Details

N-Channel 60 V 1.7A (Ta) 500mW (Ta) Surface Mount SOT-23-3

FDN5630 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Terminations: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 60V
  • Dual Supply Voltage: 60V
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Threshold Voltage: 1V
  • FET Type: N-Channel
  • Width: 1.4mm
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Length: 2.92mm
  • Turn On Delay Time: 10 ns
  • Current Rating: 1.7A
  • Fall Time (Typ): 6 ns
  • Current: 17A
  • Height: 1.22mm
  • Drive Voltage (Max Rds On,Min Rds On): 6V 10V
  • Nominal Vgs: 2.4 V
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 15V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 8 Weeks
  • Number of Pins: 3
  • Termination: SMD/SMT
  • Voltage - Rated DC: 60V
  • Voltage: 60V
  • Min Breakdown Voltage: 60V
  • Power Dissipation: 500mW
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Published: 2000
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Subcategory: FET General Purpose Power
  • Resistance: 100mOhm
  • Turn-Off Delay Time: 15 ns
  • Continuous Drain Current (ID): 1.7A
  • Rise Time: 6 ns
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: PowerTrench?
  • Lifecycle Status: ACTIVE (Last Updated: 17 hours ago)
  • Power Dissipation-Max: 500mW Ta
  • Current - Continuous Drain (Id) @ 25°C: 1.7A Ta
  • Rds On (Max) @ Id, Vgs: 100m Ω @ 1.7A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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