Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：FDG313N
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FDG313N
- SKU：4035507
- Description：FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV
User Guide
User Guide
FDG313N Details
FAIRCHILD SEMICONDUCTOR FDG313N MOSFET Transistor, N Channel, 950 mA, 25 V, 450 mohm, 4.5 V, 800 mV
FDG313N Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 6
- REACH SVHC: No SVHC
- Voltage - Rated DC: 25V
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Width: 1.25mm
- Published: 2000
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Threshold Voltage: 800mV
- Turn On Delay Time: 3 ns
- Rise Time: 8.5 ns
- Current Rating: 950mA
- Vgs (Max): ±8V
- Lifecycle Status: LAST SHIPMENTS (Last Updated: 2 days ago)
- Drain Current-Max (Abs) (ID): 0.95A
- Drive Voltage (Max Rds On,Min Rds On): 2.7V 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- Rds On (Max) @ Id, Vgs: 450m Ω @ 500mA, 4.5V
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- RoHS Status: RoHS Compliant
- Pbfree Code: yes
- JESD-609 Code: e3
- Part Status: Obsolete
- Number of Terminations: 6
- Terminal Form: GULL WING
- Length: 2mm
- Drain to Source Breakdown Voltage: 25V
- Transistor Element Material: SILICON
- Height: 1mm
- Operating Temperature: -55°C~150°C TJ
- Power Dissipation: 750mW
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Subcategory: FET General Purpose Power
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Fall Time (Typ): 8.5 ns
- Turn-Off Delay Time: 17 ns
- Continuous Drain Current (ID): 950mA
- Resistance: 450mOhm
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Weight: 28mg
- Power Dissipation-Max: 750mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C: 950mA Ta
Search for similar products
FDG313N Similar Products
The four parts on the right have similar specifications to ON Semiconductor & FDG313N
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
