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  • Manufacturer No:
    2N5551TA
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4038435
  • Description:
    This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
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Inventory:22000
  • Qty Unit Price price
  • 1 $0.07 $0.07
  • 10 $0.069 $0.69
  • 100 $0.068 $6.8
  • 1000 $0.067 $67
  • 10000 $0.066 $660

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  • Manufacturer No:
    2N5551TA
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    2N5551TA
  • SKU:
    4038435
  • Description:
    This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

2N5551TA Details

This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.

2N5551TA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Emitter Base Voltage (VEBO): 6V
  • hFE Min: 80
  • Frequency - Transition: 100MHz
  • Voltage - Rated DC: 160V
  • Collector Emitter Voltage (VCEO): 160V
  • Transistor Type: NPN
  • Current Rating: 600mA
  • Subcategory: Other Transistors
  • Frequency: 300MHz
  • Length: 5.2mm
  • Height: 5.33mm
  • Collector Emitter Saturation Voltage: 200mV
  • Power Dissipation: 625mW
  • Current - Collector Cutoff (Max): 50nA ICBO
  • Weight: 240mg
  • Base Part Number: 2N5551
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • Published: 2007
  • Element Configuration: Single
  • Packaging: Tape & Box (TB)
  • Terminal Position: BOTTOM
  • Transition Frequency: 100MHz
  • Operating Temperature: -55°C~150°C TJ
  • Collector Emitter Breakdown Voltage: 160V
  • Max Breakdown Voltage: 160V
  • Polarity/Channel Type: NPN
  • Max Collector Current: 600mA
  • Collector Base Voltage (VCBO): 180V
  • Gain Bandwidth Product: 300MHz
  • Transistor Application: AMPLIFIER
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Max Power Dissipation: 625mW
  • Width: 4.19mm
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA 5V
  • Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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