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- Manufacturer No：FQP7N80C
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FQP7N80C
- SKU：4039409
- Description：MOSFET N-CH 800V 6.6A TO-220
User Guide
User Guide
FQP7N80C Details
MOSFET N-CH 800V 6.6A TO-220
FQP7N80C Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Packaging: Tube
- Number of Pins: 3
- REACH SVHC: No SVHC
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Voltage - Rated DC: 800V
- Dual Supply Voltage: 800V
- Width: 4.7mm
- JEDEC-95 Code: TO-220AB
- Turn On Delay Time: 35 ns
- Vgs (Max): ±30V
- Fall Time (Typ): 60 ns
- Length: 10.1mm
- Series: QFET?
- Current Rating: 6.6A
- Weight: 1.8g
- Power Dissipation: 167W
- Pulsed Drain Current-Max (IDM): 26.4A
- Avalanche Energy Rating (Eas): 580 mJ
- Rds On (Max) @ Id, Vgs: 1.9 Ω @ 3.3A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Termination: Through Hole
- ECCN Code: EAR99
- JESD-609 Code: e3
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Threshold Voltage: 5V
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Factory Lead Time: 4 Weeks
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Published: 2003
- Lifecycle Status: ACTIVE (Last Updated: 1 week ago)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Drain to Source Breakdown Voltage: 800V
- Package / Case: TO-220-3
- Subcategory: FET General Purpose Power
- Turn-Off Delay Time: 50 ns
- Resistance: 1.5Ohm
- Rise Time: 100 ns
- Height: 9.4mm
- Vgs(th) (Max) @ Id: 5V @ 250μA
- Nominal Vgs: 5 V
- Continuous Drain Current (ID): 6.6A
- Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
- Power Dissipation-Max: 167W Tc
- Current - Continuous Drain (Id) @ 25°C: 6.6A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 25V
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ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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