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  • Manufacturer No:
    FDMS3604AS
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    4041305
  • Description:
    DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56 - More Details
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  • 10 $2.794 $27.94
  • 100 $2.766 $276.6
  • 1000 $2.738 $2738

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  • Manufacturer No:
    FDMS3604AS
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDMS3604AS
  • SKU:
    4041305
  • Description:
    DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56 - More Details

FDMS3604AS Details

DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56 - More Details

FDMS3604AS Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Number of Pins: 8
  • REACH SVHC: No SVHC
  • Terminal Finish: Tin (Sn)
  • Length: 5mm
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Continuous Drain Current (ID): 23A
  • JESD-30 Code: R-PDSO-N6
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • FET Feature: Logic Level Gate
  • Package / Case: 8-PowerTDFN
  • Nominal Vgs: 2 V
  • Fall Time (Typ): 3.4 ns
  • Vgs(th) (Max) @ Id: 2.7V @ 250μA
  • Feedback Cap-Max (Crss): 75 pF
  • Rise Time: 4.8ns
  • Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
  • Number of Elements: 2
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • Radiation Hardening: No
  • Part Status: Obsolete
  • Number of Terminations: 6
  • Max Power Dissipation: 1W
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Drain Current-Max (Abs) (ID): 13A
  • Width: 6mm
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Power Dissipation: 2.5W
  • Height: 1.05mm
  • Current - Continuous Drain (Id) @ 25°C: 13A 23A
  • Series: PowerTrench?
  • Turn-Off Delay Time: 31 ns
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • Case Connection: DRAIN SOURCE
  • Rds On (Max) @ Id, Vgs: 8m Ω @ 13A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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