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  • Manufacturer No:
    FDC6327C
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    4041622
  • Description:
    ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount
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  • Qty Unit Price price
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  • 10 $0.642 $6.42
  • 100 $0.635 $63.5
  • 1000 $0.628 $628
  • 10000 $0.621 $6210

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  • Manufacturer No:
    FDC6327C
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDC6327C
  • SKU:
    4041622
  • Description:
    ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount

FDC6327C Details

ON SEMICONDUCTOR - FDC6327C - Dual MOSFET, Complementary N and P Channel, 20 V, 2.7 A, 0.069 ohm, SuperSOT, Surface Mount

FDC6327C Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Factory Lead Time: 10 Weeks
  • Number of Pins: 6
  • Termination: SMD/SMT
  • Max Junction Temperature (Tj): 150°C
  • Terminal Finish: Tin (Sn)
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Width: 1.7mm
  • Current Rating: 2.7A
  • Threshold Voltage: 900mV
  • Resistance: 80mOhm
  • Rise Time: 14 ns
  • FET Feature: Logic Level Gate
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Max Power Dissipation: 960mW
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 2.7A 1.9A
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Length: 3mm
  • Published: 2000
  • Height: 1.1mm
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID): 1.9A
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Turn-Off Delay Time: 14 ns
  • Power - Max: 700mW
  • Series: PowerTrench?
  • FET Type: N and P-Channel
  • Power Dissipation: 960mW
  • Weight: 36mg
  • Nominal Vgs: 900 mV
  • Rds On (Max) @ Id, Vgs: 80m Ω @ 2.7A, 4.5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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