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- Manufacturer No：FQT4N20LTF
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FQT4N20LTF
- SKU：4043409
- Description：Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
User Guide
User Guide
FQT4N20LTF Details
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R
FQT4N20LTF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Voltage - Rated DC: 200V
- Reach Compliance Code: not_compliant
- Transistor Element Material: SILICON
- Element Configuration: Single
- Threshold Voltage: 2V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Length: 6.5mm
- Case Connection: DRAIN
- Turn-Off Delay Time: 15 ns
- Width: 3.56mm
- Rise Time: 70 ns
- Turn On Delay Time: 7 ns
- Continuous Drain Current (ID): 850mA
- Series: QFET?
- Power Dissipation: 2.2W
- Drain Current-Max (Abs) (ID): 0.85A
- Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
- Current - Continuous Drain (Id) @ 25°C: 850mA Tc
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- JESD-609 Code: e3
- Contact Plating: Tin
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 4
- Qualification Status: Not Qualified
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 200V
- Height: 1.6mm
- Factory Lead Time: 18 Weeks
- Gate to Source Voltage (Vgs): 20V
- Published: 2001
- FET Type: N-Channel
- Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- JESD-30 Code: R-PDSO-G4
- Fall Time (Typ): 40 ns
- Package / Case: TO-261-4, TO-261AA
- Current Rating: 850mA
- Vgs(th) (Max) @ Id: 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On): 5V 10V
- Resistance: 1.35Ohm
- Weight: 188mg
- Avalanche Energy Rating (Eas): 52 mJ
- Power Dissipation-Max: 2.2W Tc
- Rds On (Max) @ Id, Vgs: 1.35 Ω @ 425mA, 10V
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ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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