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  • Manufacturer No:
    FDS8958
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    Get the PDF file
  • SKU:
    4043859
  • Description:
    PowerTrench® Tape & Reel (TR) Surface Mount N and P-Channel Mosfet Array 7A 5A 5A 900mW 12.3ns
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  • Manufacturer No:
    FDS8958
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    FDS8958
  • SKU:
    4043859
  • Description:
    PowerTrench® Tape & Reel (TR) Surface Mount N and P-Channel Mosfet Array 7A 5A 5A 900mW 12.3ns

FDS8958 Details

PowerTrench® Tape & Reel (TR) Surface Mount N and P-Channel Mosfet Array 7A 5A 5A 900mW 12.3ns

FDS8958 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Terminations: 8
  • Terminal Form: GULL WING
  • Terminal Finish: Tin (Sn)
  • Power Dissipation: 2W
  • Drain to Source Breakdown Voltage: 30V
  • Pulsed Drain Current-Max (IDM): 20A
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Current Rating: 7A
  • Operating Mode: ENHANCEMENT MODE
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Series: PowerTrench?
  • FET Type: N and P-Channel
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Turn-Off Delay Time: 19.8 ns
  • Avalanche Energy Rating (Eas): 54 mJ
  • Rise Time: 9.7ns
  • Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 10V
  • Number of Elements: 2
  • Mount: Surface Mount
  • RoHS Status: RoHS Compliant
  • JESD-609 Code: e3
  • Part Status: Obsolete
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Terminal Position: DUAL
  • Continuous Drain Current (ID): 5A
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Published: 2004
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Drain Current-Max (Abs) (ID): 7A
  • JESD-30 Code: R-PDSO-G8
  • Max Power Dissipation: 900mW
  • FET Feature: Logic Level Gate
  • Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Drain-source On Resistance-Max: 0.028Ohm
  • Fall Time (Typ): 12.3 ns
  • Rds On (Max) @ Id, Vgs: 28m Ω @ 7A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 7A 5A

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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