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  • Manufacturer No:
    FDB14N30TM
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDB14N30TM
  • SKU:
    4044900
  • Description:
    MOSFET N-CH 300V 14A D2PAK

FDB14N30TM Details

MOSFET N-CH 300V 14A D2PAK

FDB14N30TM Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Pins: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Threshold Voltage: 5V
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Dual Supply Voltage: 300V
  • Reach Compliance Code: not_compliant
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Height: 4.83mm
  • Transistor Application: SWITCHING
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Turn-Off Delay Time: 30 ns
  • Continuous Drain Current (ID): 14A
  • Fall Time (Typ): 75 ns
  • Nominal Vgs: 5 V
  • Pulsed Drain Current-Max (IDM): 56A
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 14A Tc
  • Series: UniFET?
  • Width: 11.33mm
  • Avalanche Energy Rating (Eas): 330 mJ
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Qualification Status: Not Qualified
  • Termination: SMD/SMT
  • Drain to Source Breakdown Voltage: 300V
  • Factory Lead Time: 4 Weeks
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 20 ns
  • Vgs (Max): ±30V
  • Length: 10.67mm
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Power Dissipation: 140W
  • Resistance: 290mOhm
  • Rise Time: 105 ns
  • Power Dissipation-Max: 140W Tc
  • Weight: 1.31247g
  • Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V
  • Rds On (Max) @ Id, Vgs: 290m Ω @ 7A, 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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