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Inventory:39000
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  • Manufacturer No:
    FDN339AN
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDN339AN
  • SKU:
    4047066
  • Description:
    MOSFET N-CH 20V 3A SSOT3

FDN339AN Details

MOSFET N-CH 20V 3A SSOT3

FDN339AN Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 3
  • Current Rating: 3A
  • Continuous Drain Current (ID): 3A
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Power Dissipation: 500mW
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 20V
  • Dual Supply Voltage: 20V
  • FET Type: N-Channel
  • Width: 1.4mm
  • Published: 1999
  • Gate to Source Voltage (Vgs): 8V
  • Lifecycle Status: ACTIVE (Last Updated: 6 days ago)
  • Length: 2.92mm
  • Rise Time: 10 ns
  • Turn-Off Delay Time: 18 ns
  • Series: PowerTrench?
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Threshold Voltage: 850mV
  • Current - Continuous Drain (Id) @ 25°C: 3A Ta
  • Nominal Vgs: 850 mV
  • Rds On (Max) @ Id, Vgs: 35m Ω @ 3A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Drain Current-Max (Abs) (ID): 3A
  • Factory Lead Time: 10 Weeks
  • Termination: SMD/SMT
  • Max Junction Temperature (Tj): 150°C
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Subcategory: FET General Purpose Power
  • Fall Time (Typ): 10 ns
  • Turn On Delay Time: 8 ns
  • Height: 1.22mm
  • Resistance: 35mOhm
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Weight: 30mg
  • Power Dissipation-Max: 500mW Ta
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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