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  • Manufacturer No:
    TN2404K-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    404970
  • Description:
    MOSFET N-CH 240V 200MA TO236
  • Quantity:
      • RFQ
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Inventory:7850
  • Qty Unit Price price
  • 1 $145.688 $145.688
  • 10 $144.245 $1442.45
  • 100 $142.816 $14281.6
  • 1000 $141.401 $141401
  • 10000 $140 $1400000

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  • Manufacturer No:
    TN2404K-T1-GE3
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    TN2404K-T1-GE3
  • SKU:
    404970
  • Description:
    MOSFET N-CH 240V 200MA TO236

TN2404K-T1-GE3 Details

MOSFET N-CH 240V 200MA TO236

TN2404K-T1-GE3 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Time@Peak Reflow Temperature-Max (s): 30
  • REACH SVHC: Unknown
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Drain to Source Breakdown Voltage: 240V
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Drain-source On Resistance-Max: 4Ohm
  • Drain Current-Max (Abs) (ID): 0.2A
  • Turn On Delay Time: 5 ns
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Subcategory: FET General Purpose Powers
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 10V
  • Current - Continuous Drain (Id) @ 25°C: 200mA Ta
  • Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Published: 2013
  • Peak Reflow Temperature (Cel): 260
  • Factory Lead Time: 14 Weeks
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Continuous Drain Current (ID): 200mA
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Threshold Voltage: 800mV
  • Turn-Off Delay Time: 35 ns
  • Rise Time: 12 ns
  • Fall Time (Typ): 16 ns
  • Power Dissipation: 360mW
  • Weight: 1.437803g
  • Nominal Vgs: 800 mV
  • Power Dissipation-Max: 360mW Ta
  • Rds On (Max) @ Id, Vgs: 4 Ω @ 300mA, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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