Add to like
Add to project list
  • Manufacturer No:
    FDME910PZT
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4051492
  • Description:
    FDME910PZT P-Channel MOSFET, 8 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor
  • Quantity:
      • RFQ
      • Add To Cart
  • Material flow:
  • Payment:
Inventory:0
  • Qty Unit Price price

Not the price you want? Send RFQ Now and we'll contact you ASAP

  • Manufacturer No:
    FDME910PZT
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDME910PZT
  • SKU:
    4051492
  • Description:
    FDME910PZT P-Channel MOSFET, 8 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor

FDME910PZT Details

FDME910PZT P-Channel MOSFET, 8 A, 20 V PowerTrench, 6-Pin MLP ON Semiconductor

FDME910PZT Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 6
  • Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
  • Length: 1.6mm
  • Element Configuration: Single
  • Height: 500μm
  • Operating Temperature: -55°C~150°C TJ
  • Continuous Drain Current (ID): 8A
  • Transistor Application: SWITCHING
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • FET Type: P-Channel
  • Rise Time: 11 ns
  • Series: PowerTrench?
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Feedback Cap-Max (Crss): 330 pF
  • Weight: 30mg
  • Drain-source On Resistance-Max: 0.024Ohm
  • Current - Continuous Drain (Id) @ 25°C: 8A Ta
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
  • Power Dissipation-Max: 2.1W Ta
  • Rds On (Max) @ Id, Vgs: 24m Ω @ 8A, 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e4
  • Number of Terminations: 3
  • Factory Lead Time: 16 Weeks
  • Width: 1.6mm
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Published: 2017
  • Drain Current-Max (Abs) (ID): 8A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Case Connection: DRAIN
  • Turn On Delay Time: 9 ns
  • Drain to Source Breakdown Voltage: -20V
  • Vgs (Max): ±8V
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation: 2.1W
  • Fall Time (Typ): 46 ns
  • JESD-30 Code: S-PDSO-N3
  • Turn-Off Delay Time: 87 ns
  • Package / Case: 6-PowerUFDFN
  • Input Capacitance (Ciss) (Max) @ Vds: 2110pF @ 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via