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Inventory:52651
  • Qty Unit Price price
  • 1 $0.564 $0.564
  • 10 $0.558 $5.58
  • 100 $0.552 $55.2
  • 1000 $0.546 $546
  • 10000 $0.54 $5400

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  • Manufacturer No:
    FQPF7N65C
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FQPF7N65C
  • SKU:
    4053561
  • Description:
    N-Channel 650 V 7A (Tc) 52W (Tc) Through Hole TO-220F-3

FQPF7N65C Details

N-Channel 650 V 7A (Tc) 52W (Tc) Through Hole TO-220F-3

FQPF7N65C Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Reach Compliance Code: not_compliant
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Threshold Voltage: 4V
  • Current Rating: 7A
  • Continuous Drain Current (ID): 7A
  • Lifecycle Status: ACTIVE (Last Updated: 1 day ago)
  • Width: 4.7mm
  • Voltage - Rated DC: 650V
  • JEDEC-95 Code: TO-220AB
  • Turn On Delay Time: 20 ns
  • Vgs (Max): ±30V
  • Fall Time (Typ): 55 ns
  • Turn-Off Delay Time: 90 ns
  • Series: QFET?
  • Additional Feature: FAST SWITCHING
  • Weight: 2.27g
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Rds On (Max) @ Id, Vgs: 1.4 Ω @ 3.5A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Published: 2004
  • Case Connection: ISOLATED
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Drain Current-Max (Abs) (ID): 7A
  • Operating Mode: ENHANCEMENT MODE
  • Length: 10.16mm
  • Subcategory: FET General Purpose Power
  • Drain to Source Breakdown Voltage: 650V
  • Rise Time: 50 ns
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package / Case: TO-220-3 Full Pack
  • Resistance: 1.4Ohm
  • Pulsed Drain Current-Max (IDM): 28A
  • Current - Continuous Drain (Id) @ 25°C: 7A Tc
  • Height: 9.19mm
  • Power Dissipation: 52W
  • Power Dissipation-Max: 52W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 25V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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