Add to like
Add to project list
NTJD5121NT1G123
Inventory:85952
  • Qty Unit Price price
  • 1 $60.357 $60.357
  • 10 $59.759 $597.59
  • 100 $59.167 $5916.7
  • 1000 $58.581 $58581
  • 10000 $58 $580000

Not the price you want? Send RFQ Now and we'll contact you ASAP

NTJD5121NT1G
  • Manufacturer No:
    NTJD5121NT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    NTJD5121NT1G
  • SKU:
    4057776
  • Description:
    Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363

NTJD5121NT1G Details

Mosfet Array 2 N-Channel (Dual) 60V 295mA 250mW Surface Mount SC-88/SC70-6/SOT-363

NTJD5121NT1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Factory Lead Time: 16 Weeks
  • Drain to Source Breakdown Voltage: 60V
  • Element Configuration: Dual
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: FET General Purpose Power
  • Length: 2.2mm
  • Width: 1.35mm
  • Resistance: 1.6Ohm
  • Vgs(th) (Max) @ Id: 2.5V @ 250μA
  • FET Type: 2 N-Channel (Dual)
  • Turn-Off Delay Time: 34 ns
  • Continuous Drain Current (ID): 295mA
  • Nominal Vgs: 1.7 V
  • Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Pin Count: 6
  • REACH SVHC: No SVHC
  • Drain to Source Voltage (Vdss): 60V
  • Power - Max: 250mW
  • Published: 2007
  • Height: 1mm
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Threshold Voltage: 1.7V
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Power Dissipation: 250W
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • FET Feature: Logic Level Gate
  • Turn On Delay Time: 22 ns
  • Fall Time (Typ): 32 ns
  • Rise Time: 34 ns
  • Additional Feature: LOW THRESHOLD
  • Rds On (Max) @ Id, Vgs: 1.6 Ω @ 500mA, 10V
  • Max Power Dissipation: 266mW
  • Base Part Number: NTJD5121N

ON Semiconductor — Manufacturer Introduction

ON Semiconductor
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via