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- Manufacturer No：NTJD4105CT1G
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：NTJD4105CT1G
- SKU：4061755
- Description：Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
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User Guide
NTJD4105CT1G Details
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
NTJD4105CT1G Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- Radiation Hardening: No
- JESD-609 Code: e3
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2006
- Transistor Element Material: SILICON
- Factory Lead Time: 19 Weeks
- Transistor Application: SWITCHING
- Gate to Source Voltage (Vgs): 8V
- Turn-Off Delay Time: 50 ns
- Length: 2.2mm
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Resistance: 220mOhm
- Rise Time: 23 ns
- Power Dissipation: 550mW
- Drain to Source Breakdown Voltage: -8V
- Feedback Cap-Max (Crss): 5 pF
- Max Power Dissipation: 270mW
- Turn On Delay Time: 83 ns
- Threshold Voltage: 920mV
- Rds On (Max) @ Id, Vgs: 375m Ω @ 630mA, 4.5V
- Drain to Source Voltage (Vdss): 20V 8V
- Base Part Number: NTJD4105C
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Packaging: Tape & Reel (TR)
- Pbfree Code: yes
- Surface Mount: YES
- Lead Free: Lead Free
- Number of Pins: 6
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Element Configuration: Dual
- Terminal Finish: Tin (Sn)
- Height: 1mm
- Operating Temperature: -55°C~150°C TJ
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Width: 1.35mm
- FET Feature: Logic Level Gate
- Current Rating: 630mA
- Fall Time (Typ): 36 ns
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- FET Type: N and P-Channel
- Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
- Lifecycle Status: ACTIVE (Last Updated: 20 hours ago)
- Continuous Drain Current (ID): 775mA
- Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
- Current - Continuous Drain (Id) @ 25°C: 630mA 775mA
- Nominal Vgs: 920 mV
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ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
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