SUD50P10-43L-E3Vishay Siliconix
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    • Manufacturer No：
      SUD50P10-43L-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      Get the PDF file
    • SKU：
      408119
    • Description：
      MOSFET P-CH 100V 37.1A TO252
    • Quantity：
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    Inventory:3969
    • Qty Unit Price price
    • 1 $3706.634 $3706.634
    • 10 $3669.934 $36699.34
    • 100 $3633.598 $363359.8
    • 1000 $3597.621 $3597621
    • 10000 $3562 $35620000

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    • Manufacturer No：
      SUD50P10-43L-E3
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      SUD50P10-43L-E3
    • SKU：
      408119
    • Description：
      MOSFET P-CH 100V 37.1A TO252

    User Guide

    User Guide

    SUD50P10-43L-E3 Details

    MOSFET P-CH 100V 37.1A TO252

    SUD50P10-43L-E3 Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mounting Type: Surface Mount
    • Packaging: Tape & Reel (TR)
    • Number of Channels: 1
    • Pbfree Code: yes
    • JESD-609 Code: e3
    • Contact Plating: Tin
    • Number of Pins: 3
    • Terminal Form: GULL WING
    • Factory Lead Time: 14 Weeks
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Technology: MOSFET (Metal Oxide)
    • Operating Temperature: -55°C~175°C TJ
    • Vgs (Max): ±20V
    • Subcategory: Other Transistors
    • Case Connection: DRAIN
    • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
    • Turn On Delay Time: 15 ns
    • Fall Time (Typ): 100 ns
    • Vgs(th) (Max) @ Id: 3V @ 250μA
    • Turn-Off Delay Time: 110 ns
    • Rise Time: 160 ns
    • Drain to Source Breakdown Voltage: -100V
    • Power Dissipation: 8.3W
    • Height: 2.507mm
    • Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 50V
    • Current - Continuous Drain (Id) @ 25°C: 37.1A Tc
    • RoHS Status: ROHS3 Compliant
    • Number of Terminations: 2
    • Mount: Surface Mount
    • Number of Elements: 1
    • ECCN Code: EAR99
    • Radiation Hardening: No
    • Lead Free: Lead Free
    • Pin Count: 4
    • Published: 2013
    • Drain to Source Voltage (Vdss): 100V
    • Max Junction Temperature (Tj): 175°C
    • Transistor Element Material: SILICON
    • Gate to Source Voltage (Vgs): 20V
    • Transistor Application: SWITCHING
    • Operating Mode: ENHANCEMENT MODE
    • Pulsed Drain Current-Max (IDM): 40A
    • JESD-30 Code: R-PSSO-G2
    • Length: 6.73mm
    • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
    • FET Type: P-Channel
    • Width: 6.22mm
    • Series: TrenchFET?
    • Threshold Voltage: -3V
    • Weight: 1.437803g
    • Resistance: 43mOhm
    • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
    • Continuous Drain Current (ID): -9.2A
    • Power Dissipation-Max: 8.3W Ta 136W Tc
    • Rds On (Max) @ Id, Vgs: 43m Ω @ 9.2A, 10V
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