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- Manufacturer No：MMBTA42LT1G
- Manufacturer：ON Semiconductor
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MMBTA42LT1G
- SKU：4088571
- Description：TRANS NPN 300V 0.5A SOT23
User Guide
User Guide
MMBTA42LT1G Details
TRANS NPN 300V 0.5A SOT23
MMBTA42LT1G Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Collector Emitter Breakdown Voltage: 300V
- Collector Base Voltage (VCBO): 300V
- Time@Peak Reflow Temperature-Max (s): 40
- Element Configuration: Single
- hFE Min: 25
- Current Rating: 500mA
- Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
- Transition Frequency: 50MHz
- Transistor Type: NPN
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Published: 1998
- Width: 1.397mm
- Height: 1.016mm
- Max Power Dissipation: 225mW
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Surface Mount: YES
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Factory Lead Time: 16 Weeks
- Voltage - Rated DC: 300V
- Collector Emitter Voltage (VCEO): 300V
- Max Breakdown Voltage: 300V
- Transistor Element Material: SILICON
- Emitter Base Voltage (VEBO): 6V
- Operating Temperature: -55°C~150°C TJ
- Max Collector Current: 500mA
- Frequency: 50MHz
- Gain Bandwidth Product: 50MHz
- Polarity/Channel Type: NPN
- Power Dissipation: 300mW
- Subcategory: Other Transistors
- Collector Emitter Saturation Voltage: 500mV
- Current - Collector Cutoff (Max): 100nA ICBO
- Weight: 4.535924g
- Length: 3.0226mm
- Base Part Number: MMBTA42
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