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Inventory:2892
  • Qty Unit Price price
  • 1 $267.437 $267.437
  • 10 $264.789 $2647.89
  • 100 $262.167 $26216.7
  • 1000 $259.571 $259571
  • 10000 $257 $2570000

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  • Manufacturer No:
    NTHD4P02FT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NTHD4P02FT1G
  • SKU:
    4094871
  • Description:
    P-Channel 20 V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET?

NTHD4P02FT1G Details

P-Channel 20 V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET?

NTHD4P02FT1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Published: 2004
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Lifecycle Status: ACTIVE (Last Updated: 6 days ago)
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Fall Time (Typ): 13 ns
  • Resistance: 130mOhm
  • Voltage - Rated DC: -20V
  • Vgs (Max): ±12V
  • Package / Case: 8-SMD, Flat Lead
  • Vgs(th) (Max) @ Id: 1.2V @ 250μA
  • Current Rating: -3A
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
  • Rds On (Max) @ Id, Vgs: 155m Ω @ 2.2A, 4.5V
  • Current - Continuous Drain (Id) @ 25°C: 2.2A Tj
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Number of Pins: 8
  • Pin Count: 8
  • Factory Lead Time: 8 Weeks
  • Gate to Source Voltage (Vgs): 12V
  • Terminal Finish: Tin (Sn)
  • Drain to Source Voltage (Vdss): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Terminal Form: C BEND
  • Subcategory: Other Transistors
  • Pulsed Drain Current-Max (IDM): 9A
  • Turn On Delay Time: 7 ns
  • Rise Time: 13 ns
  • Drain to Source Breakdown Voltage: -20V
  • Power Dissipation: 1.1W
  • Turn-Off Delay Time: 33 ns
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • FET Feature: Schottky Diode (Isolated)
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Continuous Drain Current (ID): -2.2A
  • Power Dissipation-Max: 1.1W Tj

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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