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  • Manufacturer No:
    NDT3055
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4100636
  • Description:
    On a Reel of 4000, N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 Fairchild NDT3055
  • Quantity:
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Inventory:1290
  • Qty Unit Price price
  • 1 $0.906 $0.906
  • 10 $0.897 $8.97
  • 100 $0.888 $88.8
  • 1000 $0.879 $879
  • 10000 $0.87 $8700

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  • Manufacturer No:
    NDT3055
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NDT3055
  • SKU:
    4100636
  • Description:
    On a Reel of 4000, N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 Fairchild NDT3055

NDT3055 Details

On a Reel of 4000, N-Channel MOSFET, 4 A, 60 V, 3 + Tab-Pin SOT-223 Fairchild NDT3055

NDT3055 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 60V
  • Threshold Voltage: 3V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Power Dissipation: 3W
  • Lifecycle Status: ACTIVE (Last Updated: 3 days ago)
  • Continuous Drain Current (ID): 4A
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Vgs (Max): ±20V
  • Height: 1.8mm
  • Subcategory: FET General Purpose Power
  • Turn On Delay Time: 10 ns
  • Fall Time (Typ): 30 ns
  • Rise Time: 18 ns
  • Nominal Vgs: 3 V
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Power Dissipation-Max: 3W Ta
  • Rds On (Max) @ Id, Vgs: 100m Ω @ 4A, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 4
  • Factory Lead Time: 8 Weeks
  • Termination: SMD/SMT
  • Voltage - Rated DC: 60V
  • Dual Supply Voltage: 60V
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Published: 2017
  • Drain Current-Max (Abs) (ID): 4A
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Operating Temperature: -65°C~150°C TJ
  • Pulsed Drain Current-Max (IDM): 25A
  • Case Connection: DRAIN
  • Resistance: 100mOhm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Package / Case: TO-261-4, TO-261AA
  • Current Rating: 3.7A
  • Turn-Off Delay Time: 37 ns
  • Current - Continuous Drain (Id) @ 25°C: 4A Ta
  • Weight: 188mg
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 30V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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