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Inventory:2948
  • Qty Unit Price price
  • 1 $1177.967 $1177.967
  • 10 $1166.303 $11663.03
  • 100 $1154.755 $115475.5
  • 1000 $1143.321 $1143321
  • 10000 $1132 $11320000

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  • Manufacturer No:
    NTMFS4C06NT1G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    NTMFS4C06NT1G
  • SKU:
    4116136
  • Description:
    N-Channel 30 V 11A (Ta), 69A (Tc) 770mW (Ta), 30.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

NTMFS4C06NT1G Details

N-Channel 30 V 11A (Ta), 69A (Tc) 770mW (Ta), 30.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

NTMFS4C06NT1G Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • REACH SVHC: No SVHC
  • Number of Terminations: 5
  • Pin Count: 5
  • Reach Compliance Code: not_compliant
  • Element Configuration: Single
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Lifecycle Status: ACTIVE (Last Updated: 6 days ago)
  • Subcategory: FET General Purpose Power
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Height: 1.05mm
  • Fall Time (Typ): 3 ns
  • Turn-Off Delay Time: 24 ns
  • Vgs(th) (Max) @ Id: 2.1V @ 250μA
  • Drain-source On Resistance-Max: 0.004Ohm
  • Rds On (Max) @ Id, Vgs: 4m Ω @ 30A, 10V
  • Current - Continuous Drain (Id) @ 25°C: 11A Ta 69A Tc
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Terminal Position: DUAL
  • Factory Lead Time: 16 Weeks
  • Number of Pins: 5
  • Published: 2014
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • DS Breakdown Voltage-Min: 30V
  • Terminal Form: FLAT
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Length: 6.1mm
  • Case Connection: DRAIN
  • Threshold Voltage: 2.1V
  • Width: 5.1mm
  • Turn On Delay Time: 8 ns
  • Package / Case: 8-PowerTDFN
  • Rise Time: 28 ns
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Continuous Drain Current (ID): 69A
  • Input Capacitance (Ciss) (Max) @ Vds: 1683pF @ 15V
  • Power Dissipation-Max: 770mW Ta 30.5W Tc

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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