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  • Manufacturer No:
    MTB50P03HDLT4G
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    MTB50P03HDLT4G
  • SKU:
    4118407
  • Description:
    MOSFET PFET D2PAK 30V 50A 25mOhm

MTB50P03HDLT4G Details

MOSFET PFET D2PAK 30V 50A 25mOhm

MTB50P03HDLT4G Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Published: 2006
  • Element Configuration: Single
  • Factory Lead Time: 17 Weeks
  • Part Status: Not For New Designs
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Case Connection: DRAIN
  • FET Type: P-Channel
  • Width: 9.65mm
  • Turn-Off Delay Time: 90 ns
  • Drain to Source Breakdown Voltage: -30V
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Power Dissipation: 125W
  • Length: 10.29mm
  • Lifecycle Status: ACTIVE, NOT REC (Last Updated: 3 days ago)
  • Input Capacitance (Ciss) (Max) @ Vds: 4900pF @ 25V
  • Current Rating: -50A
  • Rds On (Max) @ Id, Vgs: 25m Ω @ 25A, 5V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • Surface Mount: YES
  • Lead Free: Lead Free
  • Drive Voltage (Max Rds On,Min Rds On): 5V
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 15V
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Height: 4.83mm
  • Threshold Voltage: 1.5V
  • Continuous Drain Current (ID): 50A
  • JESD-30 Code: R-PSSO-G2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Resistance: 25mOhm
  • Additional Feature: AVALANCHE RATED
  • Turn On Delay Time: 22 ns
  • Voltage - Rated DC: -30V
  • Vgs (Max): ±15V
  • Current - Continuous Drain (Id) @ 25°C: 50A Tc
  • Rise Time: 340 ns
  • Power Dissipation-Max: 2.5W Ta 125W Tc
  • Fall Time (Typ): 218 ns
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 5V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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