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  • Manufacturer No:
    FDN335N
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4119283
  • Description:
    ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount
  • Quantity:
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Inventory:54000
  • Qty Unit Price price
  • 1 $0.177 $0.177
  • 10 $0.175 $1.75
  • 100 $0.173 $17.3
  • 1000 $0.171 $171
  • 10000 $0.1689 $1689

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  • Manufacturer No:
    FDN335N
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDN335N
  • SKU:
    4119283
  • Description:
    ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount

FDN335N Details

ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount

FDN335N Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Factory Lead Time: 10 Weeks
  • Termination: SMD/SMT
  • Dual Supply Voltage: 25V
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 20V
  • Voltage: 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Lifecycle Status: ACTIVE (Last Updated: 5 days ago)
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: FET General Purpose Power
  • Width: 3.05mm
  • Continuous Drain Current (ID): 1.7A
  • Current: 17A
  • Height: 940μm
  • Resistance: 70mOhm
  • Rise Time: 8.5 ns
  • Vgs (Max): ±8V
  • Drive Voltage (Max Rds On,Min Rds On): 2.5V 4.5V
  • Nominal Vgs: 800 mV
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • REACH SVHC: No SVHC
  • Power Dissipation: 500mW
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Published: 1999
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Length: 2.92mm
  • Current Rating: 1.7A
  • Turn On Delay Time: 5 ns
  • Threshold Voltage: 900mV
  • Turn-Off Delay Time: 11 ns
  • Fall Time (Typ): 8.5 ns
  • Series: PowerTrench?
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Power Dissipation-Max: 500mW Ta
  • Current - Continuous Drain (Id) @ 25°C: 1.7A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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