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- Manufacturer No：SISA04DN-T1-GE3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：SISA04DN-T1-GE3
- SKU：412506
- Description：Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
User Guide
User Guide
SISA04DN-T1-GE3 Details
Semiconcuctor, Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
SISA04DN-T1-GE3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Terminations: 5
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Breakdown Voltage: 30V
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Continuous Drain Current (ID): 40A
- Threshold Voltage: 1.1V
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Turn-Off Delay Time: 30 ns
- Length: 3.1496mm
- Turn On Delay Time: 24 ns
- Vgs(th) (Max) @ Id: 2.2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 40A Tc
- Package / Case: PowerPAK? 1212-8
- Avalanche Energy Rating (Eas): 20 mJ
- Nominal Vgs: 1.1 V
- Power Dissipation-Max: 3.7W Ta 52W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 3595pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Radiation Hardening: No
- Number of Pins: 8
- Published: 2012
- Factory Lead Time: 14 Weeks
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Terminal Form: C BEND
- Case Connection: DRAIN
- Fall Time (Typ): 20 ns
- Width: 3.1496mm
- Series: TrenchFET?
- Subcategory: FET General Purpose Powers
- Height: 1.0668mm
- Power Dissipation: 3.7W
- Resistance: 2.15MOhm
- Vgs (Max): +20V, -16V
- Gate Charge (Qg) (Max) @ Vgs: 77nC @ 10V
- JESD-30 Code: S-PDSO-C5
- Rds On (Max) @ Id, Vgs: 2.15m Ω @ 15A, 10V
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