Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:4700
- Qty Unit Price price
- 1 $3.915 $3.915
- 10 $3.876 $38.76
- 100 $3.837 $383.7
- 1000 $3.799 $3799
- 10000 $3.7605 $37605
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：FDP047N08
- Manufacturer：ON Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：FDP047N08
- SKU：4126539
- Description：MOSFET N-CH 75V 164A TO-220
User Guide
User Guide
FDP047N08 Details
MOSFET N-CH 75V 164A TO-220
FDP047N08 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- REACH SVHC: No SVHC
- Terminal Finish: Tin (Sn)
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Published: 2004
- Technology: MOSFET (Metal Oxide)
- Width: 4.83mm
- Operating Temperature: -55°C~175°C TJ
- Vgs (Max): ±20V
- Subcategory: FET General Purpose Power
- Height: 16.51mm
- Length: 10.67mm
- Resistance: 4.7MOhm
- Turn-Off Delay Time: 220 ns
- Continuous Drain Current (ID): 164A
- Avalanche Energy Rating (Eas): 670 mJ
- Nominal Vgs: 3.5 V
- Fall Time (Typ): 114 ns
- Power Dissipation-Max: 268W Tc
- Pulsed Drain Current-Max (IDM): 656A
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Packaging: Tube
- Number of Pins: 3
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Transistor Element Material: SILICON
- Drain to Source Breakdown Voltage: 75V
- Factory Lead Time: 5 Weeks
- FET Type: N-Channel
- Lifecycle Status: ACTIVE (Last Updated: 2 days ago)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Package / Case: TO-220-3
- JEDEC-95 Code: TO-220AB
- Turn On Delay Time: 100 ns
- Series: PowerTrench?
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Weight: 1.8g
- Power Dissipation: 268W
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Rds On (Max) @ Id, Vgs: 4.7m Ω @ 80A, 10V
- Rise Time: 147 ns
- Current - Continuous Drain (Id) @ 25°C: 164A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 9415pF @ 25V
Search for similar products
FDP047N08 Similar Products
The four parts on the right have similar specifications to ON Semiconductor & FDP047N08
ON Semiconductor — Manufacturer Introduction
ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
