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  • Manufacturer No:
    FDB52N20TM
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4128590
  • Description:
    In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
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  • Manufacturer No:
    FDB52N20TM
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FDB52N20TM
  • SKU:
    4128590
  • Description:
    In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM

FDB52N20TM Details

In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM

FDB52N20TM Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Factory Lead Time: 6 Weeks
  • Terminal Form: GULL WING
  • Voltage - Rated DC: 200V
  • Max Junction Temperature (Tj): 150°C
  • Published: 2005
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Width: 10.16mm
  • Case Connection: DRAIN
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Fall Time (Typ): 150 ns
  • Rise Time: 160 ns
  • Continuous Drain Current (ID): 52A
  • Turn-Off Delay Time: 48 ns
  • Resistance: 49mOhm
  • Series: UniFET?
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Power Dissipation: 357W
  • Current - Continuous Drain (Id) @ 25°C: 52A Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
  • Rds On (Max) @ Id, Vgs: 49m Ω @ 26A, 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Terminations: 2
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Threshold Voltage: 5V
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Drain to Source Breakdown Voltage: 200V
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Height: 5.08mm
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • JESD-30 Code: R-PSSO-G2
  • Subcategory: FET General Purpose Power
  • Vgs (Max): ±30V
  • Vgs(th) (Max) @ Id: 5V @ 250μA
  • Nominal Vgs: 5 V
  • Current Rating: 52A
  • Turn On Delay Time: 53 ns
  • Lifecycle Status: ACTIVE (Last Updated: 22 hours ago)
  • Weight: 1.31247g
  • Length: 9.98mm
  • Pulsed Drain Current-Max (IDM): 208A
  • Power Dissipation-Max: 357W Tc
  • Avalanche Energy Rating (Eas): 2520 mJ

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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