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  • Manufacturer No:
    FQP12N60C
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FQP12N60C
  • SKU:
    4129662
  • Description:
    MOSFET N-CH 600V 12A TO-220

FQP12N60C Details

MOSFET N-CH 600V 12A TO-220

FQP12N60C Specification Parameters

  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Through Hole
  • Termination: Through Hole
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Factory Lead Time: 6 Weeks
  • Number of Terminations: 3
  • Qualification Status: Not Qualified
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Transistor Element Material: SILICON
  • Voltage - Rated DC: 600V
  • Dual Supply Voltage: 600V
  • Part Status: Not For New Designs
  • FET Type: N-Channel
  • Current Rating: 12A
  • Threshold Voltage: 4V
  • Operating Mode: ENHANCEMENT MODE
  • Width: 4.7mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Vgs (Max): ±30V
  • Length: 10.1mm
  • Series: QFET?
  • Nominal Vgs: 4 V
  • Rise Time: 85 ns
  • Current - Continuous Drain (Id) @ 25°C: 12A Tc
  • Turn-Off Delay Time: 155 ns
  • Lifecycle Status: ACTIVE, NOT REC (Last Updated: 2 days ago)
  • Power Dissipation-Max: 225W Tc
  • Input Capacitance (Ciss) (Max) @ Vds: 2290pF @ 25V
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Elements: 1
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Packaging: Tube
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Tin (Sn)
  • Element Configuration: Single
  • Drain to Source Breakdown Voltage: 600V
  • Gate to Source Voltage (Vgs): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Continuous Drain Current (ID): 12A
  • Transistor Application: SWITCHING
  • Package / Case: TO-220-3
  • JEDEC-95 Code: TO-220AB
  • Turn On Delay Time: 30 ns
  • Height: 9.4mm
  • Fall Time (Typ): 90 ns
  • Power Dissipation: 225W
  • Pulsed Drain Current-Max (IDM): 48A
  • Resistance: 650mOhm
  • Weight: 1.8g
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Rds On (Max) @ Id, Vgs: 650m Ω @ 6A, 10V
  • Avalanche Energy Rating (Eas): 870 mJ

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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