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  • Manufacturer No:
    FQT5P10TF
  • Manufacturer:
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    4130160
  • Description:
    ON SEMICONDUCTOR - FQT5P10TF - MOSFET-Transistor, p-Kanal, -1 A, -100 V, 0.82 ohm, -10 V, -4 V
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Inventory:9
  • Qty Unit Price price
  • 1 $0.343 $0.343
  • 10 $0.339 $3.39
  • 100 $0.335 $33.5
  • 1000 $0.331 $331
  • 10000 $0.3274 $3274

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  • Manufacturer No:
    FQT5P10TF
  • Manufacturer:
    ON Semiconductor
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    FQT5P10TF
  • SKU:
    4130160
  • Description:
    ON SEMICONDUCTOR - FQT5P10TF - MOSFET-Transistor, p-Kanal, -1 A, -100 V, 0.82 ohm, -10 V, -4 V

FQT5P10TF Details

ON SEMICONDUCTOR - FQT5P10TF - MOSFET-Transistor, p-Kanal, -1 A, -100 V, 0.82 ohm, -10 V, -4 V

FQT5P10TF Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 4
  • Terminal Form: GULL WING
  • Drain to Source Voltage (Vdss): 100V
  • Drain Current-Max (Abs) (ID): 1A
  • Transistor Element Material: SILICON
  • Power Dissipation: 2W
  • Published: 2002
  • Operating Temperature: -55°C~150°C TJ
  • Continuous Drain Current (ID): 1mA
  • Lifecycle Status: ACTIVE (Last Updated: 4 days ago)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • JESD-30 Code: R-PDSO-G4
  • FET Type: P-Channel
  • Fall Time (Typ): 30 ns
  • Turn-Off Delay Time: 12 ns
  • Package / Case: TO-261-4, TO-261AA
  • Series: QFET?
  • Drain to Source Breakdown Voltage: -100V
  • Current Rating: -1A
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Avalanche Energy Rating (Eas): 55 mJ
  • Current - Continuous Drain (Id) @ 25°C: 1A Tc
  • Rds On (Max) @ Id, Vgs: 1.05 Ω @ 500mA, 10V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Height: 1.6mm
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 30V
  • Factory Lead Time: 24 Weeks
  • Pulsed Drain Current-Max (IDM): 4A
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Length: 6.5mm
  • Case Connection: DRAIN
  • Width: 3.56mm
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Vgs (Max): ±30V
  • Rise Time: 70 ns
  • Turn On Delay Time: 9 ns
  • Voltage - Rated DC: -100V
  • Resistance: 1.05Ohm
  • Threshold Voltage: -4V
  • Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
  • Weight: 188mg
  • Power Dissipation-Max: 2W Tc

ON Semiconductor — Manufacturer Introduction

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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